Hello everyone. Sorry to bother you. I am trying to model a Micromegas detector mesh in Garfield++. As a first step, I want to model a single square hole in the mesh. The hole size is 70 × 70 µm. The detector configuration is the following: the cathode is at -300 V, the mesh/grid is at 0 V, and the anode is at +500 V. The drift gap between the cathode and the mesh is 5 mm, and the amplification gap between the mesh and the anode is 128 µm. From one primary electron entering the amplification region, I expect a gain of roughly 2000–4000 electrons on anode from one electron, but in my simulations I obtain only about 150–200 electrons from one. I have tried two approaches: first, building the mesh hole geometry explicitly with SolidBox objects, and second, using an interface-style approach similar to the ASACUSA Garfield++ example, where the mesh is treated more like a boundary between regions. So I suspect that I may be missing some important feature of the mesh description or the field/transport setup. Could someone please point out what I might be doing wrong? Is the problem more likely related to the geometry of the hole, the field calculation, the gas/transport settings, or the way the avalanche is started and counted? Thanks in advance for any advice.
micro.C (5.2 KB)
ar_93_co2_5_ic4h10_2.gas.txt (71.7 KB)
hole.C (8.3 KB)